SLA5065

Specifications

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Vgsth Max Id

2V @ 250μA

Power Max

4.8W

Qualification Status

Not Qualified

RoHS Durumu

RoHS Compliant

Montaj Tipi

Through Hole

Input Capacitance Ciss Max Vds

660pF @ 10V

Transistor Element Material

SILICON

Kurşunsuz Kodu

yes

Jesd30 Code

R-PSFM-T15

Ambalaj

Tube

Fet Feature

Standard

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rds On Max Id Vgs

100m Ω @ 3.5A, 10V

Çalışma Sıcaklığı

150°C TJ

Transistor Application

SWITCHING

Terminal Pozisyonu

SINGLE

Avalanche Energy Rating Eas

60 mJ

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

15-SIP Exposed Tab, Formed Leads

Drain To Source Voltage Vdss

60V

Continuous Drain Current Id

7A

Operating Mode

ENHANCEMENT MODE

Configuration

2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Parça Durumu

Active

Drain Currentmax Abs Id

7A

HTS Kodu

8541.29.00.95

Yayın Yılı

2001

Drainsource On Resistancemax

0.1Ohm

Fet Type

4 N-Channel

ECCN Kodu

EAR99

Number Of Elements

4

Polaritychannel Type

P-CHANNEL

Montaj

Through Hole

Max Power Dissipation

4.8W

Ds Breakdown Voltagemin

60V

Pin Sayısı

15

Pulsed Drain Currentmax Idm

15A

Terminal Sayısı

15