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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Fet Feature
- Logic Level Gate
- Ambalaj
- Tube
- Avalanche Energy Rating Eas
- 120 mJ
- Terminal Pozisyonu
- SINGLE
- Çalışma Sıcaklığı
- 150°C TJ
- Rds On Max Id Vgs
- 175m Ω @ 5A, 10V
- Vgsth Max Id
- 4V @ 1mA
- Qualification Status
- Not Qualified
- Power Max
- 5W
- REACH Uyumluluk Kodu
- unknown
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance Ciss Max Vds
- 850pF @ 10V
- Transistor Element Material
- SILICON
- Jesd30 Code
- R-PSFM-T12
- Kurşunsuz Kodu
- yes
- RoHS Durumu
- RoHS Compliant
- Montaj Tipi
- Through Hole
- Ds Breakdown Voltagemin
- 200V
- Max Power Dissipation
- 5W
- Montaj
- Through Hole
- Number Of Elements
- 4
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Terminal Sayısı
- 12
- Pulsed Drain Currentmax Idm
- 40A
- Pin Sayısı
- 12
- HTS Kodu
- 8541.29.00.95
- Configuration
- SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
- Parça Durumu
- Active
- Operating Mode
- ENHANCEMENT MODE
- Kılıf / Paket
- 12-SIP
- Drain To Source Voltage Vdss
- 200V
- Continuous Drain Current Id
- 10A
- Fabrika Tedarik Süresi
- 12 Weeks
- ECCN Kodu
- EAR99
- Fet Type
- 4 N-Channel
- Drainsource On Resistancemax
- 0.175Ohm
- Yayın Yılı
- 2001
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