Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 120 nC @ 10 V
- RoHS
- Compliant
- Power Dissipation Max
- 160W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Vgsth Max Id
- 4V @ 250µA
- Montaj Tipi
- Surface Mount
- Direnç
- 50 Ω
- Kılıf / Paket
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Çalışma Sıcaklığı
- -55°C ~ 175°C (TJ)
- Drive Voltage Max Rds On Min Rds On
- 10V
- Paket
- Bulk
- Rds On Max Id Vgs
- 18mOhm @ 35A, 10V
- Seri
- HEXFET®
- Ürün Durumu
- Active
- Vgs Max
- ±20V
- Drain To Source Voltage Vdss
- 100 V
- Tedarikçi Cihaz Paketi
- PG-TO263-3
- Current Continuous Drain Id25
- 59A (Tc)
- Input Capacitance Ciss Max Vds
- 2900 pF @ 25 V
- Fet Type
- N-Channel
- Uzunluk
- 3.54 m
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