IRFM220A

Specifications

Pin Sayısı

4

Yüzey Montaj

YES

Drain Currentmax Id

1.13 A

Package Body Material

PLASTIC/EPOXY

Ihs Manufacturer

SAMSUNG SEMICONDUCTOR INC

Transistor Element Material

SILICON

Jesd30 Code

R-PDSO-G4

Part Package Code

TO-261AA

Polaritychannel Type

N-CHANNEL

Jedec95 Code

TO-261AA

Qualification Status

Not Qualified

Ds Breakdown Voltagemin

200 V

Operating Mode

ENHANCEMENT MODE

Terminal Formu

GULL WING

ECCN Kodu

EAR99

Number Of Elements

1

Pulsed Drain Currentmax Idm

9 A

Number Of Terminals

4

Terminal Pozisyonu

DUAL

Power Dissipationmax Abs

2.4 W

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Temperaturemax

150 °C

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Package Style

SMALL OUTLINE

Part Life Cycle Code

Obsolete

Avalanche Energy Rating Eas

77 mJ

Package Shape

RECTANGULAR

Drainsource On Resistancemax

0.8 Ω

Package Description

SMALL OUTLINE, R-PDSO-G4

REACH Uyumluluk Kodu

unknown