K4B1G1646G-BCH9

Specifications

Clock Frequencymax Fclk

667 MHz

Access Timemax

0.255 ns

Supply Currentmax

0.17 mA

Memory Width

16

Moisture Sensitivity Levels

3

Package Code

FBGA

Standby Currentmax

0.01 A

Refresh Cycles

8192

Reflow Temperaturemax S

NOT SPECIFIED

Sequential Burst Length

4,8

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Memory Density

1073741824 bit

Terminal Adımı

0.8 mm

Number Of Terminals

96

Organization

64MX16

Terminal Pozisyonu

BOTTOM

Io Type

COMMON

Memory Ic Type

DDR DRAM

Package Style

GRID ARRAY, FINE PITCH

JESD-609 Kodu

e1

Power Supplies

1.5 V

Output Characteristics

3-STATE

Risk Rank

8.58

Yüzey Montaj

YES

Tepe Reflow Sıcaklığı (°C)

225

Package Body Material

PLASTIC/EPOXY

Package Shape

RECTANGULAR

Üretici Parça No

K4B1G1646G-BCH9

Interleaved Burst Length

4,8

Jesd30 Code

R-PBGA-B96

Technology

CMOS

Package Description

FBGA, BGA96,9X16,32

Ihs Manufacturer

SAMSUNG SEMICONDUCTOR INC

REACH Uyumluluk Kodu

compliant

Part Life Cycle Code

Obsolete

Number Of Words

67108864 words

Terminal Formu

BALL

Package Equivalence Code

BGA96,9X16,32

Qualification Status

Not Qualified

Supply Voltagenom Vsup

1.5 V