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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Parça Durumu
- Active
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Ds Breakdown Voltagemin
- 20V
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transistor Element Material
- SILICON
- Pin Sayısı
- 6
- ECCN Kodu
- EAR99
- Input Capacitance Ciss Max Vds
- 15pF @ 10V
- Fabrika Tedarik Süresi
- 16 Weeks
- Drain Currentmax Abs Id
- 0.1A
- Rds On Max Id Vgs
- 3.8 Ω @ 100mA, 4.5V
- Transistor Application
- SWITCHING
- Drain To Source Voltage Vdss
- 20V
- Kurşunsuz
- Lead Free
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Operating Mode
- ENHANCEMENT MODE
- RoHS Durumu
- ROHS3 Compliant
- Yayın Yılı
- 2012
- Tepe Reflow Süresi (maks. sn)
- 10
- JESD-609 Kodu
- e1
- Continuous Drain Current Id
- 100mA
- Max Power Dissipation
- 120mW
- Kılıf / Paket
- 6-SMD, Flat Leads
- Power Max
- 120mW
- Fet Type
- 2 P-Channel (Dual)
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
- Montaj Tipi
- Surface Mount
- Çalışma Sıcaklığı
- 150°C TJ
- Terminal Kaplaması
- TIN SILVER COPPER
- Number Of Elements
- 2
- Terminal Sayısı
- 6
- Ambalaj
- Cut Tape (CT)
- Vgsth Max Id
- 1V @ 100μA
- Fet Feature
- Logic Level Gate, 1.2V Drive
- Jesd30 Code
- R-PDSO-F6
- Montaj
- Surface Mount
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