UT6MA3TCR

Specifications

Power Max

2W

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Voltage Vdss

20V

Operating Mode

ENHANCEMENT MODE

Fabrika Tedarik Süresi

20 Weeks

RoHS Durumu

ROHS3 Compliant

Fet Type

N and P-Channel

Input Capacitance Ciss Max Vds

460pF @ 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ambalaj

Cut Tape (CT)

Drain Currentmax Abs Id

5.5A

Jesd30 Code

S-PDSO-N6

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Kılıf / Paket

6-PowerUDFN

Gate Charge Qg Max Vgs

6.5nC @ 4.5V

Current Continuous Drain Id25

5A 5.5A

Montaj Tipi

Surface Mount

Yüzey Montaj

YES

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Case Connection

DRAIN

Terminal Sayısı

6

Avalanche Energy Rating Eas

2 mJ

Terminal Formu

NO LEAD

Rds On Max Id Vgs

59m Ω @ 5A, 4.5V

REACH Uyumluluk Kodu

not_compliant

Vgsth Max Id

1.5V @ 1mA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

12A

Parça Durumu

Active

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Drainsource On Resistancemax

0.042Ohm

Number Of Elements

2

Ds Breakdown Voltagemin

20V