UT6MA2TCR

Specifications

Ds Breakdown Voltagemin

30V

Drainsource On Resistancemax

0.08Ohm

Number Of Elements

2

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Pulsed Drain Currentmax Idm

12A

Transistor Application

SWITCHING

Parça Durumu

Active

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Nem Hassasiyeti (MSL)

1 (Unlimited)

Vgsth Max Id

2.5V @ 1mA

Rds On Max Id Vgs

46m Ω @ 4A, 10V, 70m Ω @ 4A, 10V

Terminal Formu

NO LEAD

Avalanche Energy Rating Eas

6.4 mJ

Case Connection

DRAIN

Terminal Sayısı

6

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Current Continuous Drain Id25

4A Ta

Montaj Tipi

Surface Mount

Yüzey Montaj

YES

Gate Charge Qg Max Vgs

4.3nC, 6.7nC @ 10V

Fet Feature

Standard

Kılıf / Paket

8-PowerUDFN

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Transistor Element Material

SILICON

Jesd30 Code

S-PDSO-N6

Drain Currentmax Abs Id

4A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ambalaj

Cut Tape (CT)

RoHS Durumu

ROHS3 Compliant

Input Capacitance Ciss Max Vds

180pF 305pF @ 15V

Fet Type

N and P-Channel

Drain To Source Voltage Vdss

30V

Çalışma Sıcaklığı

150°C TJ

Fabrika Tedarik Süresi

16 Weeks

Operating Mode

ENHANCEMENT MODE

Power Max

2W Ta