UT6K3TCR1

Specifications

Rds On Drainsource Resistance

42 mOhms

Pd Power Dissipation

2 W

Id Continuous Drain Current

5.5 A

Vgs Th Gatesource Threshold Voltage

1.5 V

Montaj Stili

SMD/SMT

Typical Turnon Delay Time

7.2 ns

Current Continuous Drain Id25

5.5A (Ta)

Montaj Tipi

Surface Mount

Vgsth Max Id

1.5V @ 1mA

RoHS

Details

Fabrika Paket Adedi

3000

Rds On Max Id Vgs

42mOhm @ 5A, 4.5V

Qg Gate Charge

4 nC

Rise Time

5.8 ns

Gate Charge Qg Max Vgs

4nC @ 4.5V

Kılıf / Paket

8-PowerUDFN

Fet Feature

Standard

Vds Drainsource Breakdown Voltage

30 V

Vgs Gatesource Voltage

- 12 V, + 12 V

Tedarikçi Cihaz Paketi

HUML2020L8

Configuration

Dual

Drain To Source Voltage Vdss

30V

Channel Mode

Enhancement

Çalışma Sıcaklığı

150°C (TJ)

Transistor Polarity

N-Channel

Technology

Si

Typical Turnoff Delay Time

13 ns

Number Of Channels

2 Channel

Ürün Tipi

MOSFET

Power Max

2W (Ta)

Ambalaj

MouseReel

Ürün Durumu

Active

Input Capacitance Ciss Max Vds

450pF @ 15V

Maks. Çalışma Sıcaklığı

+ 150 C

Fet Type

2 N-Channel (Dual)