UT6JA2TCR

Specifications

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Drain Currentmax Abs Id

4A

Jesd30 Code

S-PDSO-N6

Kılıf / Paket

6-PowerUDFN

Gate Charge Qg Max Vgs

6.7nC @ 10V

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Voltage Vdss

30V

Fabrika Tedarik Süresi

20 Weeks

Operating Mode

ENHANCEMENT MODE

Power Max

2W

Ambalaj

Cut Tape (CT)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

RoHS Durumu

ROHS3 Compliant

Fet Type

2 P-Channel (Dual)

Input Capacitance Ciss Max Vds

305pF @ 15V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

12A

Parça Durumu

Active

Ds Breakdown Voltagemin

30V

Drainsource On Resistancemax

0.103Ohm

Number Of Elements

2

Case Connection

DRAIN

Terminal Sayısı

6

Current Continuous Drain Id25

4A

Montaj Tipi

Surface Mount

Yüzey Montaj

YES

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

REACH Uyumluluk Kodu

not_compliant

Vgsth Max Id

2.5V @ 1mA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Avalanche Energy Rating Eas

6.5 mJ

Terminal Formu

NO LEAD

Rds On Max Id Vgs

70m Ω @ 4A, 10V