US6J2TR

Specifications

Voltage Rated Dc

-20V

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

Gate Charge Qg Max Vgs

2.1nC @ 4.5V

Kurşunsuz Kodu

yes

Drain Currentmax Abs Id

1A

Element Configuration

Dual

JESD-609 Kodu

e2

Radyasyon Dayanımı

No

Drain To Source Voltage Vdss

20V

Terminal Kaplaması

TIN COPPER

Transistor Element Material

SILICON

Continuous Drain Current Id

1A

Input Capacitance Ciss Max Vds

150pF @ 10V

Terminal Sayısı

6

Rds On Max Id Vgs

390m Ω @ 1A, 4.5V

Turn Off Delay Time

25 ns

Fet Type

2 P-Channel (Dual)

Drain To Source Breakdown Voltage

-20V

Tepe Reflow Sıcaklığı (°C)

260

Transistor Application

SWITCHING

Gate To Source Voltage Vgs

12V

Çalışma Sıcaklığı

150°C TJ

ECCN Kodu

EAR99

Fall Time Typ

10 ns

Number Of Elements

2

Fabrika Tedarik Süresi

10 Weeks

Pin Sayısı

6

RoHS Durumu

ROHS3 Compliant

Max Power Dissipation

1W

Rise Time

8ns

Kılıf / Paket

6-SMD, Flat Leads

Kurşunsuz

Lead Free

Montaj Tipi

Surface Mount

Pin Sayısı

6

Power Dissipation

1W

Temel Parça No

*J2

Fet Feature

Logic Level Gate

Direnç

390MOhm

Turn On Delay Time

9 ns