Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Tepe Reflow Sıcaklığı (°C)
- 260
- Transistor Element Material
- SILICON
- Transistor Type
- NPN, PNP (Emitter Coupled)
- Max Breakdown Voltage
- 50V
- Fabrika Tedarik Süresi
- 13 Weeks
- Temel Parça No
- *MY1
- RoHS Durumu
- ROHS3 Compliant
- Montaj Tipi
- Surface Mount
- Element Configuration
- Dual
- Collectoremitter Saturation Voltage
- 400mV
- ECCN Kodu
- EAR99
- Max Power Dissipation
- 150mW
- Parça Durumu
- Active
- Number Of Elements
- 2
- Polarity
- NPN, PNP
- Max Frequency
- 100MHz
- Collector Emitter Voltage Vceo
- 50V
- Terminal Formu
- GULL WING
- Pin Sayısı
- 5
- Vcesatmax
- 0.4 V
- Current Collector Cutoff Max
- 100nA ICBO
- Max Collector Current
- 150mA
- Uzunluk
- 2mm
- Gain Bandwidth Product
- 180MHz
- Kurşunsuz Kodu
- yes
- Transistor Application
- AMPLIFIER
- Continuous Collector Current
- 150mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Akım Değeri
- 150mA
- Kılıf / Paket
- 5-TSSOP, SC-70-5, SOT-353
- Collectoremitter Breakdown Voltage
- 50V
- Yayın Yılı
- 2004
- Terminal Kaplaması
- Tin/Copper (Sn/Cu)
- Hfemin
- 120
- Frequency Transition
- 180MHz 140MHz
- Emitter Base Voltage Vebo
- 7V
- Transition Frequency
- 180MHz
- Reach Svhc
- No SVHC
- Kurşunsuz
- Lead Free
- Tepe Reflow Süresi (maks. sn)
- 10
Related Products
Echelon Corporation
15400R-57B
Arrays BJT Transistors
Echelon Corporation
15401R-47BP
Arrays BJT Transistors
Echelon Corporation
15402R-47B
Arrays BJT Transistors
Central Semiconductor Corp
2N2060
Arrays BJT Transistors
Central Semiconductor Corp
2N2060A
Arrays BJT Transistors
Microsemi Corporation
2N2060L
Arrays BJT Transistors
Central Semiconductor Corp
2N2060M
Arrays BJT Transistors
Seme LAB
2N2223
Arrays BJT Transistors

