Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Dc Current Gain Hfe Min Ic Vce
- 56 @ 10mA 10V
- Ambalaj
- Tape & Reel (TR)
- Power Dissipation
- 150mW
- Çalışma Sıcaklığı
- 150°C TJ
- Pin Sayısı
- 6
- Terminal Sayısı
- 6
- Collector Base Voltage Vcbo
- 30V
- JESD-609 Kodu
- e2
- Montaj
- Surface Mount
- Kurşunsuz
- Lead Free
- Tepe Reflow Süresi (maks. sn)
- 10
- Vce Saturation Max Ib Ic
- 500mV @ 4mA, 20mA
- Radyasyon Dayanımı
- No
- Hfemin
- 27
- Transition Frequency
- 1500MHz
- Reach Svhc
- No SVHC
- HTS Kodu
- 8541.21.00.75
- Emitter Base Voltage Vebo
- 3V
- Yayın Yılı
- 2008
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Akım Değeri
- 50mA
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collectoremitter Breakdown Voltage
- 20V
- Terminal Kaplaması
- TIN COPPER
- Current Collector Cutoff Max
- 500nA ICBO
- Max Collector Current
- 50mA
- Vcesatmax
- 0.5 V
- Pin Sayısı
- 6
- Kurşunsuz Kodu
- yes
- Gain Bandwidth Product
- 1.5 GHz
- Continuous Collector Current
- 50mA
- Transistor Application
- AMPLIFIER
- Number Of Elements
- 2
- Polarity
- NPN
- Collector Emitter Voltage Vceo
- 20V
- Terminal Formu
- GULL WING
- ECCN Kodu
- EAR99
- Parça Durumu
- Not For New Designs
- Max Power Dissipation
- 150mW
- Temel Parça No
- MX4
Related Products
Echelon Corporation
15400R-57B
Arrays BJT Transistors
Echelon Corporation
15401R-47BP
Arrays BJT Transistors
Echelon Corporation
15402R-47B
Arrays BJT Transistors
Central Semiconductor Corp
2N2060
Arrays BJT Transistors
Central Semiconductor Corp
2N2060A
Arrays BJT Transistors
Microsemi Corporation
2N2060L
Arrays BJT Transistors
Central Semiconductor Corp
2N2060M
Arrays BJT Transistors
Seme LAB
2N2223
Arrays BJT Transistors

