UMH33NTN

Specifications

Transistor Type

2 NPN - Pre-Biased (Dual)

Rohs Code

Yes

Terminal Pozisyonu

DUAL

Terminal Kaplaması

Tin/Copper (Sn/Cu)

Dc Current Gain Hfe Min Ic Vce

820 @ 10mA, 5V

Collector Currentmax Ic

0.4 A

Maks. Çalışma Sıcaklığı

+ 150 C

Power Dissipation

0.15(W)

Number Of Terminals

6

Power Max

150mW

Pd Power Dissipation

150 mW

Vce Saturation Max Ib Ic

100mV @ 3mA, 30mA

Ambalaj

Tape and Reel

Yüzey Montaj

YES

Part Aliases

UMH33N

Montaj Stili

SMD/SMT

Transition Frequencynom Ft

35 MHz

Lifecycle Status

Production (Last Updated: 2 years ago)

Kılıf / Paket

6-TSSOP, SC-88, SOT-363

Jesd30 Code

R-PDSO-G6

Current Collector Cutoff Max

500nA (ICBO)

REACH Uyumluluk Kodu

compliant

Package Description

SMALL OUTLINE, R-PDSO-G6

Transistor Polarity

NPN

Additional Feature

BUILT IN BIAS RESISTOR

Risk Rank

1.77

Package Type

UMT

Dc Collectorbase Gain Hfe Min

820

Resistor Base R1

2.2kOhms

Emittercollector Voltage Max

20(V)

Continuous Collector Current

0.4 A

Package Body Material

PLASTIC/EPOXY

Voltage Collector Emitter Breakdown Max

20V

Ihs Manufacturer

ROHM CO LTD

JESD-609 Kodu

e2

Üretici Parça No

UMH33NTN

Currentcollector Ic Max

400mA

Collectoremitter Voltagemax

20 V

Ürün Tipi

BJTs - Bipolar Transistors - Pre-Biased

Transistor Application

SWITCHING