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UMB4NFHATN

ROHM Semiconductor

UMB4NFHATN

Arrays BJT Transistors

RoHS: Compliant

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Specifications

Voltage Collector Emitter Breakdown Max
50V
Dc Current Gain Hfe Min Ic Vce
100 @ 1mA 5V
Vce Saturation Max Ib Ic
300mV @ 1mA, 10mA
Power Max
150mW
Additional Feature
BUILT IN BIAS RESISTOR
Currentcollector Ic Max
100mA
Transistor Application
SWITCHING
Frequency Transition
250MHz
Terminal Formu
GULL WING
Çalışma Sıcaklığı
150°C TJ
Nem Hassasiyeti (MSL)
1 (Unlimited)
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Polaritychannel Type
PNP
RoHS Durumu
ROHS3 Compliant
Ambalaj
Cut Tape (CT)
Current Collector Cutoff Max
500nA ICBO
Terminal Sayısı
6
Reach Svhc
Unknown
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Number Of Elements
2
ECCN Kodu
EAR99
Fabrika Tedarik Süresi
13 Weeks
Transistor Type
2 PNP Pre-Biased (Dual)
Collectoremitter Breakdown Voltage
-50V
Yayın Yılı
2016
Kılıf / Paket
6-TSSOP, SC-88, SOT-363
Transistor Element Material
SILICON
Yüzey Montaj
YES
Pin Sayısı
6
Seri
Automotive, AEC-Q101
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Montaj Tipi
Surface Mount
Parça Durumu
Active
Transition Frequency
250MHz

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