Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Additional Feature
- BUILT IN BIAS RESISTANCE RATIO IS 21
- Power Max
- 150mW
- Vce Saturation Max Ib Ic
- 300mV @ 250μA, 5mA
- Currentcollector Ic Max
- 100mA
- Dc Current Gain Hfe Min Ic Vce
- 80 @ 10mA 5V
- Terminal Sayısı
- 6
- Ambalaj
- Cut Tape (CT)
- Polaritychannel Type
- PNP
- RoHS Durumu
- ROHS3 Compliant
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Number Of Elements
- 2
- Reach Svhc
- Unknown
- Transistor Application
- SWITCHING
- Çalışma Sıcaklığı
- 150°C TJ
- Frequency Transition
- 250MHz
- Terminal Formu
- GULL WING
- Kılıf / Paket
- 6-TSSOP, SC-88, SOT-363
- Yayın Yılı
- 2016
- Collectoremitter Breakdown Voltage
- -50V
- Yüzey Montaj
- YES
- Transistor Element Material
- SILICON
- Fabrika Tedarik Süresi
- 13 Weeks
- ECCN Kodu
- EAR99
- Transistor Type
- 2 PNP Pre-Biased (Dual)
- Montaj Tipi
- Surface Mount
- Parça Durumu
- Active
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
- Transition Frequency
- 250MHz
- Pin Sayısı
- 6
- Seri
- Automotive, AEC-Q101
Related Products
Echelon Corporation
15400R-57B
Arrays BJT Transistors
Echelon Corporation
15401R-47BP
Arrays BJT Transistors
Echelon Corporation
15402R-47B
Arrays BJT Transistors
Central Semiconductor Corp
2N2060
Arrays BJT Transistors
Central Semiconductor Corp
2N2060A
Arrays BJT Transistors
Microsemi Corporation
2N2060L
Arrays BJT Transistors
Central Semiconductor Corp
2N2060M
Arrays BJT Transistors
Seme LAB
2N2223
Arrays BJT Transistors

