TT8M3TR

Specifications

Transistor Element Material

SILICON

Continuous Drain Current Id

2.4A

Number Of Elements

2

Ds Breakdown Voltagemin

20V

Pin Sayısı

8

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.09Ohm

Input Capacitance Ciss Max Vds

260pF @ 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Vgsth Max Id

1V @ 1mA

Drain Currentmax Abs Id

2.5A

Yayın Yılı

2010

Çalışma Sıcaklığı

150°C TJ

Fet Feature

Logic Level Gate, 1.5V Drive

Montaj

Surface Mount

Drain To Source Voltage Vdss

20V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

10

Terminal Pozisyonu

DUAL

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-F8

Current Continuous Drain Id25

2.5A 2.4A

Qualification Status

Not Qualified

Kılıf / Paket

8-SMD, Flat Lead

JESD-609 Kodu

e2

Max Power Dissipation

1W

Ambalaj

Cut Tape (CT)

Rds On Max Id Vgs

72m Ω @ 2.5A, 4.5V

Kurşunsuz

Lead Free

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Montaj Tipi

Surface Mount

Parça Durumu

Not For New Designs

Tepe Reflow Sıcaklığı (°C)

260

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Kaplaması

TIN COPPER

Gate Charge Qg Max Vgs

3.6nC @ 4.5V

Fet Type

N and P-Channel