TT8M2TR

Specifications

Radyasyon Dayanımı

No

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

8

Temel Parça No

*M2

Fabrika Tedarik Süresi

10 Weeks

Fet Type

N and P-Channel

Gate Charge Qg Max Vgs

3.2nC @ 4.5V

Gate To Source Voltage Vgs

10V

Pin Sayısı

8

Max Power Dissipation

1.25W

Ambalaj

Tape & Reel (TR)

Turn Off Delay Time

120 ns

Kılıf / Paket

8-SMD, Flat Lead

Parça Durumu

Not For New Designs

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Rds On Max Id Vgs

90m Ω @ 2.5A, 4.5V

Montaj

Surface Mount

Vgsth Max Id

1.5V @ 1mA

Turn On Delay Time

9 ns

Çalışma Sıcaklığı

150°C TJ

Yayın Yılı

2009

Fet Feature

Logic Level Gate

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

10

Terminal Pozisyonu

DUAL

Transistor Application

SWITCHING

Drain To Source Breakdown Voltage

-20V

Drain To Source Voltage Vdss

30V 20V

Fall Time Typ

85 ns

Continuous Drain Current Id

2.5A

Transistor Element Material

SILICON

Number Of Elements

2

Input Capacitance Ciss Max Vds

180pF @ 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Channels

2