TT8M1TR

Specifications

Rds On Max Id Vgs

72m Ω @ 2.5A, 4.5V

Kurşunsuz

Lead Free

Power Max

1W

Montaj Tipi

Surface Mount

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Parça Durumu

Not For New Designs

Kılıf / Paket

8-SMD, Flat Lead

JESD-609 Kodu

e2

Max Power Dissipation

1W

Ambalaj

Cut Tape (CT)

Gate Charge Qg Max Vgs

3.6nC @ 4.5V

Terminal Kaplaması

TIN COPPER

Fet Type

N and P-Channel

Fabrika Tedarik Süresi

10 Weeks

Terminal Sayısı

8

Tepe Reflow Sıcaklığı (°C)

260

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pin Sayısı

8

Drainsource On Resistancemax

0.09Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Input Capacitance Ciss Max Vds

260pF @ 10V

Number Of Elements

2

Transistor Element Material

SILICON

Continuous Drain Current Id

2.5A

Ds Breakdown Voltagemin

20V

Drain To Source Voltage Vdss

20V

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

10

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Jesd30 Code

R-PDSO-F8

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Qualification Status

Not Qualified

Yayın Yılı

2010

Çalışma Sıcaklığı

150°C TJ

Fet Feature

Logic Level Gate, 1.5V Drive

Vgsth Max Id

1V @ 1mA