TT8K2TR

Specifications

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

30ns

Drainsource On Resistancemax

0.13Ohm

Pin Sayısı

8

Input Capacitance Ciss Max Vds

180pF @ 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fall Time Typ

20 ns

Continuous Drain Current Id

2.5A

Transistor Element Material

SILICON

Number Of Elements

2

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

10

Drain To Source Breakdown Voltage

30V

Drain To Source Voltage Vdss

30V

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Power Dissipation

1.25W

Montaj

Surface Mount

Turn On Delay Time

7 ns

Vgsth Max Id

1.5V @ 1mA

Yayın Yılı

2015

Çalışma Sıcaklığı

150°C TJ

Fet Feature

Logic Level Gate

Kurşunsuz

Lead Free

Rds On Max Id Vgs

90m Ω @ 2.5A, 4.5V

Parça Durumu

Not For New Designs

Montaj Tipi

Surface Mount

Turn Off Delay Time

20 ns

Kılıf / Paket

8-SMD, Flat Lead

Max Power Dissipation

1.25W

Ambalaj

Cut Tape (CT)

JESD-609 Kodu

e2

Gate Charge Qg Max Vgs

3.2nC @ 4.5V

Terminal Kaplaması

TIN COPPER

Gate To Source Voltage Vgs

12V

Pin Sayısı

8

Terminal Sayısı

8

Temel Parça No

*K2