TT8K1TR

Specifications

Fabrika Tedarik Süresi

10 Weeks

Terminal Sayısı

8

Fet Type

2 N-Channel (Dual)

Gate Charge Qg Max Vgs

3.6nC @ 4.5V

Terminal Kaplaması

TIN COPPER

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

260

Parça Durumu

Not For New Designs

Montaj Tipi

Surface Mount

Kurşunsuz

Lead Free

Power Max

1W

Rds On Max Id Vgs

72m Ω @ 2.5A, 4.5V

Max Power Dissipation

1W

Ambalaj

Cut Tape (CT)

JESD-609 Kodu

e2

Kılıf / Paket

8-SMD, Flat Lead

Qualification Status

Not Qualified

Jesd30 Code

R-PDSO-F8

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

10

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

20V

Montaj

Surface Mount

Çalışma Sıcaklığı

150°C TJ

Yayın Yılı

2010

Fet Feature

Logic Level Gate, 1.5V Drive

Vgsth Max Id

1V @ 1mA

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Input Capacitance Ciss Max Vds

260pF @ 10V

Drainsource On Resistancemax

0.09Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Pin Sayısı

8

Ds Breakdown Voltagemin

20V

Number Of Elements

2

Continuous Drain Current Id

2.5A

Transistor Element Material

SILICON