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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- RoHS Durumu
- ROHS3 Compliant
- Jesd30 Code
- R-PDSO-F8
- Drain To Source Voltage Vdss
- 30V
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Vgsth Max Id
- 2.5V @ 1A
- Drain Currentmax Abs Id
- 3A
- Yayın Yılı
- 2011
- Çalışma Sıcaklığı
- 150°C TJ
- Fet Feature
- Logic Level Gate, 4V Drive
- Montaj
- Surface Mount
- Input Capacitance Ciss Max Vds
- 140pF @ 10V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drainsource On Resistancemax
- 0.109Ohm
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 3A
- Number Of Elements
- 2
- Ds Breakdown Voltagemin
- 30V
- Fet Type
- 2 N-Channel (Dual)
- Terminal Sayısı
- 8
- Fabrika Tedarik Süresi
- 10 Weeks
- Gate Charge Qg Max Vgs
- 2.5nC @ 5V
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Montaj Tipi
- Surface Mount
- Parça Durumu
- Not For New Designs
- REACH Uyumluluk Kodu
- not_compliant
- Rds On Max Id Vgs
- 71m Ω @ 3A, 10V
- Power Max
- 1W
- Ambalaj
- Cut Tape (CT)
- Max Power Dissipation
- 1W
- Kılıf / Paket
- 8-SMD, Flat Lead
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