TT8J3TR

Specifications

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Type

2 P-Channel (Dual)

Fabrika Tedarik Süresi

10 Weeks

Terminal Sayısı

8

Yüzey Montaj

YES

Gate Charge Qg Max Vgs

4.8nC @ 5V

Ambalaj

Cut Tape (CT)

Kılıf / Paket

8-SMD, Flat Lead

Montaj Tipi

Surface Mount

Parça Durumu

Not For New Designs

REACH Uyumluluk Kodu

not_compliant

Rds On Max Id Vgs

84m Ω @ 2.5A, 10V

Power Max

1.25W

Çalışma Sıcaklığı

150°C TJ

Drain Currentmax Abs Id

2.5A

Vgsth Max Id

2.5V @ 1mA

Jesd30 Code

R-PDSO-F8

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

2.5A

Drain To Source Voltage Vdss

30V

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Number Of Elements

2

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

30V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Input Capacitance Ciss Max Vds

460pF @ 15V

Drainsource On Resistancemax

0.084Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)