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TT8J2TR

ROHM Semiconductor

TT8J2TR

MOSFETs Transistors Arrays

RoHS: Compliant

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Specifications

Turn Off Delay Time
35 ns
Kılıf / Paket
8-SMD, Flat Lead
Max Power Dissipation
1.25W
Ambalaj
Tape & Reel (TR)
JESD-609 Kodu
e2
Kurşunsuz
Lead Free
Rds On Max Id Vgs
84m Ω @ 2.5A, 10V
Parça Durumu
Not For New Designs
Montaj Tipi
Surface Mount
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Tepe Reflow Sıcaklığı (°C)
260
Radyasyon Dayanımı
No
Gate Charge Qg Max Vgs
4.8nC @ 5V
Terminal Kaplaması
TIN COPPER
Pin Sayısı
8
Gate To Source Voltage Vgs
20V
Temel Parça No
*J2
Fabrika Tedarik Süresi
10 Weeks
Terminal Sayısı
8
Fet Type
2 P-Channel (Dual)
Number Of Elements
2
Fall Time Typ
14 ns
Continuous Drain Current Id
2.5A
Transistor Element Material
SILICON
Rise Time
20ns
Nem Hassasiyeti (MSL)
1 (Unlimited)
Pin Sayısı
8
Fet Technology
METAL-OXIDE SEMICONDUCTOR
Pulsed Drain Currentmax Idm
10A
Input Capacitance Ciss Max Vds
460pF @ 10V
Montaj
Surface Mount
Power Dissipation
1.25W
Çalışma Sıcaklığı
150°C TJ
Yayın Yılı
2009
Fet Feature
Logic Level Gate
Turn On Delay Time
7 ns
Vgsth Max Id
2.5V @ 1mA
ECCN Kodu
EAR99
Tepe Reflow Süresi (maks. sn)
10
Operating Mode
ENHANCEMENT MODE

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