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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Dissipation
- 1.25W
- Montaj
- Surface Mount
- Vgsth Max Id
- 1V @ 1mA
- Turn On Delay Time
- 9 ns
- Yayın Yılı
- 2009
- Çalışma Sıcaklığı
- 150°C TJ
- Fet Feature
- Logic Level Gate
- Direnç
- 280MOhm
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Tepe Reflow Süresi (maks. sn)
- 10
- ECCN Kodu
- EAR99
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Drain To Source Breakdown Voltage
- 20V
- Drain To Source Voltage Vdss
- 20V
- Transistor Element Material
- SILICON
- Fall Time Typ
- 30 ns
- Continuous Drain Current Id
- 2.5A
- Number Of Elements
- 2
- Input Capacitance Ciss Max Vds
- 1270pF @ 10V
- Pulsed Drain Currentmax Idm
- 10A
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Contact Plating
- Copper, Tin
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rise Time
- 30ns
- Pin Sayısı
- 8
- Radyasyon Dayanımı
- No
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Tepe Reflow Sıcaklığı (°C)
- 260
- Terminal Sayısı
- 8
- Temel Parça No
- *J21
- Fabrika Tedarik Süresi
- 10 Weeks
- Fet Type
- 2 P-Channel (Dual)
- Gate Charge Qg Max Vgs
- 12nC @ 4.5V
- Terminal Kaplaması
- Tin/Copper (Sn/Cu)
- Gate To Source Voltage Vgs
- 10V
- Pin Sayısı
- 8
- Max Power Dissipation
- 650mW
- Ambalaj
- Tape & Reel (TR)
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