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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- 2 P-Channel (Dual)
- Temel Parça No
- *J1
- Terminal Sayısı
- 8
- Pin Sayısı
- 8
- Gate To Source Voltage Vgs
- 10V
- Gate Charge Qg Max Vgs
- 13nC @ 4.5V
- Radyasyon Dayanımı
- No
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Montaj Tipi
- Surface Mount
- Parça Durumu
- Obsolete
- Rds On Max Id Vgs
- 61m Ω @ 2.5A, 4.5V
- Power Max
- 1.25W
- Max Power Dissipation
- 1W
- Ambalaj
- Tape & Reel (TR)
- Kılıf / Paket
- 8-SMD, Flat Lead
- Turn Off Delay Time
- 130 ns
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Drain To Source Voltage Vdss
- 12V
- Transistor Application
- SWITCHING
- ECCN Kodu
- EAR99
- Operating Mode
- ENHANCEMENT MODE
- Yayın Yılı
- 2009
- Çalışma Sıcaklığı
- 150°C TJ
- Fet Feature
- Standard
- Vgsth Max Id
- 1V @ 1mA
- Turn On Delay Time
- 9 ns
- Montaj
- Surface Mount
- Input Capacitance Ciss Max Vds
- 1350pF @ 6V
- Pulsed Drain Currentmax Idm
- 10A
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Pin Sayısı
- 8
- Drainsource On Resistancemax
- 0.061Ohm
- Rise Time
- 35ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 2
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 2.5A
- Fall Time Typ
- 85 ns
- Ds Breakdown Voltagemin
- 12V
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