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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Drain To Source Voltage Vdss
- 12V
- Jesd30 Code
- R-PDSO-F8
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Montaj
- Surface Mount
- Fet Feature
- Logic Level Gate, 1.5V Drive
- Çalışma Sıcaklığı
- 150°C TJ
- Yayın Yılı
- 2011
- Vgsth Max Id
- 1V @ 1mA
- Drainsource On Resistancemax
- 0.062Ohm
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pin Sayısı
- 8
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Pulsed Drain Currentmax Idm
- 5A
- Input Capacitance Ciss Max Vds
- 2000pF @ 6V
- Ds Breakdown Voltagemin
- 12V
- Number Of Elements
- 2
- Continuous Drain Current Id
- 2.5A
- Transistor Element Material
- SILICON
- Gate Charge Qg Max Vgs
- 16nC @ 4.5V
- Fabrika Tedarik Süresi
- 10 Weeks
- Terminal Sayısı
- 8
- Fet Type
- 2 P-Channel (Dual)
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Power Max
- 1W
- Kurşunsuz
- Lead Free
- Rds On Max Id Vgs
- 62m Ω @ 2.5A, 4.5V
- Parça Durumu
- Not For New Designs
- Montaj Tipi
- Surface Mount
- Kılıf / Paket
- 8-SMD, Flat Lead
- Ambalaj
- Cut Tape (CT)
- Max Power Dissipation
- 1W
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