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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drainsource On Resistancemax
- 0.025Ohm
- Rise Time
- 30ns
- Pin Sayısı
- 8
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Pulsed Drain Currentmax Idm
- 36A
- Input Capacitance Ciss Max Vds
- 1190pF @ 10V
- Ds Breakdown Voltagemin
- 30V
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 5A
- Number Of Elements
- 2
- Terminal Pozisyonu
- DUAL
- Tepe Reflow Süresi (maks. sn)
- 10
- ECCN Kodu
- EAR99
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Drain To Source Voltage Vdss
- 30V
- Qualification Status
- Not Qualified
- Current Continuous Drain Id25
- 9A 5A
- RoHS Durumu
- ROHS3 Compliant
- Montaj
- Surface Mount
- Vgsth Max Id
- 2.5V @ 1mA
- Fet Feature
- Logic Level Gate
- Drain Currentmax Abs Id
- 9A
- Yayın Yılı
- 2004
- Çalışma Sıcaklığı
- 150°C TJ
- Akım Değeri
- 9A
- Kurşunsuz
- Lead Free
- Rds On Max Id Vgs
- 18m Ω @ 9A, 10V
- Parça Durumu
- Obsolete
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Montaj Tipi
- Surface Mount
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Max Power Dissipation
- 2W
- Ambalaj
- Tape & Reel (TR)
- JESD-609 Kodu
- e2
- Gate Charge Qg Max Vgs
- 21nC @ 5V
- Terminal Kaplaması
- TIN COPPER
- Pin Sayısı
- 8
- Terminal Sayısı
- 8
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