SP8M6FRATB

Specifications

Drainsource On Resistancemax

0.082Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Input Capacitance Ciss Max Vds

230pF @ 10V 490pF @ 10V

Pulsed Drain Currentmax Idm

20A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Ds Breakdown Voltagemin

30V

Number Of Elements

2

Transistor Element Material

SILICON

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Drain To Source Voltage Vdss

30V

Current Continuous Drain Id25

5A Ta 3.5A Ta

Jesd30 Code

R-PDSO-G8

RoHS Durumu

ROHS3 Compliant

Drain Currentmax Abs Id

5A

Yayın Yılı

2016

Çalışma Sıcaklığı

150°C

Fet Feature

Standard

Vgsth Max Id

2.5V @ 1mA

Power Max

2W

Rds On Max Id Vgs

51m Ω @ 5A, 10V, 90m Ω @ 3.5A, 10V

REACH Uyumluluk Kodu

not_compliant

Parça Durumu

Active

Montaj Tipi

Surface Mount

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Ambalaj

Cut Tape (CT)

Gate Charge Qg Max Vgs

3.9nC @ 5V, 5.5nC @ 5V

Yüzey Montaj

YES

Seri

Automotive, AEC-Q101

Fabrika Tedarik Süresi

20 Weeks

Terminal Sayısı

8

Fet Type

N and P-Channel

Terminal Formu

GULL WING

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED