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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Input Capacitance Ciss Max Vds
- 520pF @ 10V
- Pulsed Drain Currentmax Idm
- 24A
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Drainsource On Resistancemax
- 0.047Ohm
- Rise Time
- 50ns
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Pin Sayısı
- 8
- Ds Breakdown Voltagemin
- 30V
- Number Of Elements
- 2
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 7A
- Qualification Status
- Not Qualified
- Current Continuous Drain Id25
- 6A 7A
- Kurşunsuz Kodu
- yes
- RoHS Durumu
- ROHS3 Compliant
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- 10
- Terminal Pozisyonu
- DUAL
- Drain To Source Voltage Vdss
- 30V
- Montaj
- Surface Mount
- Fet Feature
- Logic Level Gate
- Çalışma Sıcaklığı
- 150°C TJ
- Yayın Yılı
- 2004
- Drain Currentmax Abs Id
- 6A
- Vgsth Max Id
- 2.5V @ 1mA
- Parça Durumu
- Obsolete
- Montaj Tipi
- Surface Mount
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Kurşunsuz
- Lead Free
- Akım Değeri
- 6A
- Rds On Max Id Vgs
- 30m Ω @ 6A, 10V
- Ambalaj
- Tape & Reel (TR)
- Max Power Dissipation
- 2W
- JESD-609 Kodu
- e2
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Temel Parça No
- *M5
- Terminal Sayısı
- 8
- Fet Type
- N and P-Channel
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