SP8M5FRATB

Specifications

Number Of Elements

2

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

30V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Currentmax Idm

24A

Input Capacitance Ciss Max Vds

520pF @ 10V 2600pF @ 10V

Drainsource On Resistancemax

0.047Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fet Feature

Standard

Çalışma Sıcaklığı

150°C TJ

Yayın Yılı

2017

Drain Currentmax Abs Id

6A

Vgsth Max Id

2.5V @ 1mA

Jesd30 Code

R-PDSO-G8

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

6A Ta 7A Ta

Drain To Source Voltage Vdss

30V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Ambalaj

Cut Tape (CT)

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Montaj Tipi

Surface Mount

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Parça Durumu

Active

Rds On Max Id Vgs

30m Ω @ 6A, 10V, 28m Ω @ 7A, 10V

Power Max

2W

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Type

N and P-Channel

Terminal Formu

GULL WING

Fabrika Tedarik Süresi

20 Weeks

Terminal Sayısı

8

Yüzey Montaj

YES

Seri

Automotive, AEC-Q101

Gate Charge Qg Max Vgs

7.2nC @ 5V, 25nC @ 5V