SP8M51HZGTB

Specifications

Fet Feature

Standard

Çalışma Sıcaklığı

150°C (TJ)

Vgsth Max Id

2.5V @ 1mA

Fabrika Paket Adedi

2500

Qualification

AEC-Q101

Vgs Th Gatesource Threshold Voltage

2.5 V

Typical Turnoff Delay Time

50 ns

RoHS

Details

Tedarikçi Cihaz Paketi

8-SOP

Current Continuous Drain Id25

3A (Ta), 2.5A (Ta)

Drain To Source Voltage Vdss

100V

Channel Mode

Enhancement

Typical Turnon Delay Time

13 ns

Id Continuous Drain Current

3 A, 2.5 A

Montaj Stili

SMD/SMT

Continuous Drain Current Id

3A

Minimum Operating Temperature

- 55 C

Pd Power Dissipation

2 W

Vds Drainsource Breakdown Voltage

100 V

Channel Type

N, P

Number Of Channels

2 Channel

Input Capacitance Ciss Max Vds

610pF @ 25V, 1550pF @ 25V

Pin Sayısı

8

Maks. Çalışma Sıcaklığı

+ 150 C

Rise Time

13 ns

Configuration

Dual

Transistor Polarity

N and P Channel

Fet Type

N and P-Channel

Transistor Type

1 N-Channel, 1 P-Channel

Gate Charge Qg Max Vgs

8.5nC @ 5V, 12.5nC @ 5V

Technology

Si

Qg Gate Charge

8.5 nC

Ürün Durumu

Active

Ambalaj

Cut Tape

Rds On Drainsource Resistance

170 mOhms

Kılıf / Paket

8-SOIC (0.154", 3.90mm Width)

Montaj Tipi

Surface Mount

Package Type

SOP

Number Of Elements Per Chip

1

Vgs Gatesource Voltage

- 20 V, + 20 V