SP8M51FRATB

Specifications

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.19Ohm

Input Capacitance Ciss Max Vds

610pF @ 10V 1550pF @ 25V

Pulsed Drain Currentmax Idm

12A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material

SILICON

Number Of Elements

2

Ds Breakdown Voltagemin

100V

Drain To Source Voltage Vdss

100V

Transistor Application

SWITCHING

Terminal Pozisyonu

DUAL

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-G8

Current Continuous Drain Id25

3A Ta 2.5A Ta

Vgsth Max Id

2.5V @ 1mA

Fet Feature

Standard

Çalışma Sıcaklığı

150°C TJ

Yayın Yılı

2017

Drain Currentmax Abs Id

3A

Rds On Max Id Vgs

170m Ω @ 3A, 10V, 290m Ω @ 2.5A, 10V

Power Max

2W

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Montaj Tipi

Surface Mount

Parça Durumu

Active

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Ambalaj

Cut Tape (CT)

Seri

Automotive, AEC-Q101

Yüzey Montaj

YES

Gate Charge Qg Max Vgs

8.5nC @ 5V, 12.5nC @ 5V

Terminal Formu

GULL WING

Fet Type

N and P-Channel

Terminal Sayısı

8

Fabrika Tedarik Süresi

20 Weeks

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE