SP8M4HZGTB

Specifications

Montaj Stili

SMD/SMT

Minimum Operating Temperature

- 55 C

Continuous Drain Current Id

9A

Pd Power Dissipation

2 W

Vds Drainsource Breakdown Voltage

30 V

Channel Type

N, P

Number Of Channels

2 Channel

Input Capacitance Ciss Max Vds

1190pF @ 10V, 2600pF @ 10V

Maks. Çalışma Sıcaklığı

+ 150 C

Pin Sayısı

8

Rise Time

15 ns

Fet Feature

Standard

Çalışma Sıcaklığı

150°C (TJ)

Vgsth Max Id

2.5V @ 1mA

Fabrika Paket Adedi

2500

Qualification

AEC-Q101

Typical Turnoff Delay Time

55 ns

Vgs Th Gatesource Threshold Voltage

2.5 V

RoHS

Details

Tedarikçi Cihaz Paketi

8-SOP

Current Continuous Drain Id25

9A (Ta), 7A (Ta)

Drain To Source Voltage Vdss

30V

Channel Mode

Enhancement

Id Continuous Drain Current

9 A, 7 A

Typical Turnon Delay Time

10 ns

Qg Gate Charge

15 nC

Ürün Durumu

Active

Ambalaj

Cut Tape

Rds On Drainsource Resistance

18 mOhms

Kılıf / Paket

8-SOIC (0.154", 3.90mm Width)

Montaj Tipi

Surface Mount

Package Type

SOP

Number Of Elements Per Chip

2

Vgs Gatesource Voltage

- 20 V, + 20 V

Rds On Max Id Vgs

18mOhm @ 9A, 10V, 28mOhm @ 7A, 10V

Power Max

1.4W (Ta)

Ürün Tipi

MOSFET

Transistor Polarity

N and P Channel

Configuration

Dual

Fet Type

N and P-Channel