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Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Application
- SWITCHING
- Operating Mode
- ENHANCEMENT MODE
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- 10
- Terminal Pozisyonu
- DUAL
- Drain To Source Voltage Vdss
- 30V
- Current Continuous Drain Id25
- 5A 4.5A
- RoHS Durumu
- ROHS3 Compliant
- Kurşunsuz Kodu
- yes
- Montaj
- Surface Mount
- Vgsth Max Id
- 2.5V @ 1mA
- Fet Feature
- Logic Level Gate
- Çalışma Sıcaklığı
- 150°C TJ
- Yayın Yılı
- 2004
- Drain Currentmax Abs Id
- 5A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rise Time
- 25ns
- Pin Sayısı
- 8
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Pulsed Drain Currentmax Idm
- 20A
- Input Capacitance Ciss Max Vds
- 230pF @ 10V
- Ds Breakdown Voltagemin
- 30V
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 4.5A
- Number Of Elements
- 2
- Terminal Kaplaması
- TIN COPPER
- Gate Charge Qg Max Vgs
- 3.9nC @ 5V
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 8
- Terminal Sayısı
- 8
- Temel Parça No
- *M3
- Terminal Formu
- GULL WING
- Fet Type
- N and P-Channel
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Tepe Reflow Sıcaklığı (°C)
- 260
- Radyasyon Dayanımı
- No
- Kurşunsuz
- Lead Free
- Akım Değeri
- 5A
- Rds On Max Id Vgs
- 51m Ω @ 5A, 10V
- Parça Durumu
- Active
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