SP8M3HZGTB

Specifications

Drain To Source Voltage Vdss

30V

Channel Mode

Enhancement

Id Continuous Drain Current

5 A, 4.5 A

Vgs Th Gatesource Threshold Voltage

2.5 V

Tedarikçi Cihaz Paketi

8-SOP

Current Continuous Drain Id25

5A (Ta), 4.5A (Ta)

Qualification

AEC-Q101

Fet Feature

Standard

Çalışma Sıcaklığı

150°C (TJ)

Vgsth Max Id

2.5V @ 1mA

Maks. Çalışma Sıcaklığı

+ 150 C

Pin Sayısı

8

Vds Drainsource Breakdown Voltage

30 V

Number Of Channels

2 Channel

Channel Type

N, P

Input Capacitance Ciss Max Vds

230pF @ 10V, 850pF @ 10V

Montaj Stili

SMD/SMT

Minimum Operating Temperature

- 55 C

Continuous Drain Current Id

5A

Pd Power Dissipation

2 W

Gate Charge Qg Max Vgs

3.9nC @ 5V, 8.5nC @ 5V

Technology

Si

Fet Type

N and P-Channel

Transistor Polarity

N and P Channel

Vgs Gatesource Voltage

- 20 V, + 20 V

Rds On Max Id Vgs

51mOhm @ 5A, 10V, 56mOhm @ 4.5A, 10V

Power Max

2W (Ta)

Montaj Tipi

Surface Mount

Package Type

SOP

Number Of Elements Per Chip

1

Kılıf / Paket

8-SOIC (0.154", 3.90mm Width)

Qg Gate Charge

3.9 nC

Ürün Durumu

Active

Rds On Drainsource Resistance

51 mOhms