SP8M24FRATB

Specifications

Fet Type

N and P-Channel

Terminal Formu

GULL WING

Fabrika Tedarik Süresi

20 Weeks

Terminal Sayısı

8

Yüzey Montaj

YES

Seri

Automotive, AEC-Q101

Gate Charge Qg Max Vgs

9.6nC @ 5V, 18.2nC @ 5V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Montaj Tipi

Surface Mount

Polaritychannel Type

N-CHANNEL AND P-CHANNEL

Parça Durumu

Active

Rds On Max Id Vgs

46m Ω @ 4.5A, 10V, 63m Ω @ 3.5A, 10V

Power Max

2W

Ambalaj

Cut Tape (CT)

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Jesd30 Code

R-PDSO-G8

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

4.5A Ta 3.5A Ta

Drain To Source Voltage Vdss

45V

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Pozisyonu

DUAL

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Drain Currentmax Abs Id

4.5A

Yayın Yılı

2017

Çalışma Sıcaklığı

150°C TJ

Fet Feature

Standard

Vgsth Max Id

2.5V @ 1mA

Pulsed Drain Currentmax Idm

18A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Input Capacitance Ciss Max Vds

550pF @ 10V 1700pF @ 10V

Drainsource On Resistancemax

0.064Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Number Of Elements

2

Transistor Element Material

SILICON

Ds Breakdown Voltagemin

45V