SP8M21HZGTB

Specifications

Number Of Channels

2 Channel

Channel Type

N, P

Vds Drainsource Breakdown Voltage

45 V

Input Capacitance Ciss Max Vds

1400pF @ 10V, 2400pF @10V

Pin Sayısı

8

Maks. Çalışma Sıcaklığı

+ 150 C

Rise Time

30 ns

Continuous Drain Current Id

6A

Minimum Operating Temperature

- 55 C

Montaj Stili

SMD/SMT

Pd Power Dissipation

2 W

RoHS

Details

Vgs Th Gatesource Threshold Voltage

2.5 V

Typical Turnoff Delay Time

72 ns

Current Continuous Drain Id25

6A (Ta), 4A (Ta)

Tedarikçi Cihaz Paketi

8-SOP

Drain To Source Voltage Vdss

45V

Typical Turnon Delay Time

19 ns

Id Continuous Drain Current

6 A, 4 A

Channel Mode

Enhancement

Vgsth Max Id

2.5V @ 1mA

Fet Feature

Standard

Çalışma Sıcaklığı

150°C (TJ)

Fabrika Paket Adedi

2500

Qualification

AEC-Q101

Montaj Tipi

Surface Mount

Number Of Elements Per Chip

2

Package Type

SOP

Vgs Gatesource Voltage

- 20 V, + 20 V

Rds On Max Id Vgs

25mOhm @ 6A, 10V, 46mOhm @ 4A, 10V

Ürün Tipi

MOSFET

Power Max

2W (Ta)

Qg Gate Charge

21.6 nC

Rds On Drainsource Resistance

25 mOhms

Ürün Durumu

Active

Ambalaj

Cut Tape

Kılıf / Paket

8-SOIC (0.154", 3.90mm Width)

Transistor Type

1 N-Channel, 1 P-Channel

Fet Type

N and P-Channel

Technology

Si