SP8M10TB

Specifications

Vgsth Max Id

2.5V @ 1mA

Fet Feature

Logic Level Gate

Çalışma Sıcaklığı

150°C TJ

Drain Currentmax Abs Id

7A

Yayın Yılı

2004

Montaj

Surface Mount

Drain To Source Voltage Vdss

30V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

10

Terminal Pozisyonu

DUAL

Kurşunsuz Kodu

yes

RoHS Durumu

ROHS3 Compliant

Qualification Status

Not Qualified

Current Continuous Drain Id25

7A 4.5A

Continuous Drain Current Id

4.5A

Transistor Element Material

SILICON

Number Of Elements

2

Ds Breakdown Voltagemin

30V

Pin Sayısı

8

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

25ns

Drainsource On Resistancemax

0.037Ohm

Input Capacitance Ciss Max Vds

600pF @ 10V

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Tepe Reflow Sıcaklığı (°C)

260

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Pin Sayısı

8

Gate Charge Qg Max Vgs

8.4nC @ 5V

Terminal Kaplaması

TIN COPPER

Terminal Formu

GULL WING

Fet Type

N and P-Channel

Terminal Sayısı

8

Temel Parça No

*M10

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

JESD-609 Kodu

e2

Max Power Dissipation

2W

Ambalaj

Tape & Reel (TR)

Rds On Max Id Vgs

25m Ω @ 7A, 10V