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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Input Capacitance Ciss Max Vds
- 600pF @ 10V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rise Time
- 25ns
- Fall Time Typ
- 25 ns
- Continuous Drain Current Id
- 4.5A
- RoHS Durumu
- ROHS3 Compliant
- Current Continuous Drain Id25
- 7A 4.5A
- Drain To Source Breakdown Voltage
- 30V
- Operating Mode
- ENHANCEMENT MODE
- Vgsth Max Id
- 2.5V @ 1mA
- Fet Feature
- Logic Level Gate
- Çalışma Sıcaklığı
- 150°C TJ
- Yayın Yılı
- 2004
- Drain Currentmax Abs Id
- 7A
- Power Dissipation
- 2W
- Montaj
- Surface Mount
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Montaj Tipi
- Surface Mount
- Parça Durumu
- Obsolete
- REACH Uyumluluk Kodu
- unknown
- Rds On Max Id Vgs
- 24m Ω @ 7A, 10V
- Max Power Dissipation
- 2W
- Ambalaj
- Tape & Reel (TR)
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Turn Off Delay Time
- 60 ns
- Fet Type
- N and P-Channel
- Temel Parça No
- *M10
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 8
- Gate Charge Qg Max Vgs
- 11.8nC @ 5V
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