SP8K52HZGTB

Specifications

Fabrika Paket Adedi

2500

Vgsth Max Id

2.5V @ 1mA

Fet Feature

Standard

Çalışma Sıcaklığı

150°C (TJ)

Qualification

AEC-Q101

Current Continuous Drain Id25

3A (Ta)

Tedarikçi Cihaz Paketi

8-SOP

RoHS

Details

Typical Turnoff Delay Time

50 ns

Vgs Th Gatesource Threshold Voltage

2.5 V

Id Continuous Drain Current

3 A

Typical Turnon Delay Time

13 ns

Channel Mode

Enhancement

Drain To Source Voltage Vdss

100V

Pd Power Dissipation

2 W

Minimum Operating Temperature

- 55 C

Continuous Drain Current Id

3A

Montaj Stili

SMD/SMT

Input Capacitance Ciss Max Vds

610pF @ 25V

Channel Type

N

Number Of Channels

2 Channel

Vds Drainsource Breakdown Voltage

100 V

Rise Time

13 ns

Maks. Çalışma Sıcaklığı

+ 150 C

Pin Sayısı

8

Transistor Polarity

N Channel

Configuration

Dual

Transistor Type

2 N-Channel

Fet Type

2 N-Channel (Dual)

Technology

Si

Gate Charge Qg Max Vgs

8.5nC @ 5V

Rds On Drainsource Resistance

170 mOhms

Ürün Durumu

Active

Ambalaj

Cut Tape

Qg Gate Charge

8.5 nC

Kılıf / Paket

8-SOIC (0.154", 3.90mm Width)

Number Of Elements Per Chip

2

Package Type

SOP

Montaj Tipi

Surface Mount

Ürün Tipi

MOSFET