SP8K33FRATB

Specifications

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Terminal Sayısı

8

Fabrika Tedarik Süresi

20 Weeks

Terminal Formu

GULL WING

Fet Type

2 N-Channel (Dual)

Gate Charge Qg Max Vgs

12nC @ 5V

Seri

Automotive, AEC-Q101

Yüzey Montaj

YES

Pin Sayısı

8

Max Power Dissipation

2W

Ambalaj

Cut Tape (CT)

Reach Svhc

Unknown

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Parça Durumu

Active

REACH Uyumluluk Kodu

not_compliant

Montaj Tipi

Surface Mount

Rds On Max Id Vgs

48m Ω @ 5A, 10V

Vgsth Max Id

2.5V @ 1mA

Fet Feature

Standard

Çalışma Sıcaklığı

150°C

Yayın Yılı

2015

Drain Currentmax Abs Id

5A

Current Continuous Drain Id25

5A Ta

RoHS Durumu

ROHS3 Compliant

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Drain To Source Voltage Vdss

60V

Ds Breakdown Voltagemin

60V

Continuous Drain Current Id

5A

Transistor Element Material

SILICON

Number Of Elements

2

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Currentmax Idm

20A

Input Capacitance Ciss Max Vds

620pF @ 10V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.056Ohm

Threshold Voltage

2.5V