SP8K31HZGTB

Specifications

Montaj Stili

SMD/SMT

Minimum Operating Temperature

- 55 C

Continuous Drain Current Id

3.5A

Pd Power Dissipation

2 W

Vds Drainsource Breakdown Voltage

60 V

Channel Type

N Channel

Number Of Channels

2 Channel

Input Capacitance Ciss Max Vds

250pF @ 10V

Maks. Çalışma Sıcaklığı

+ 150 C

Rise Time

14 ns

Fet Feature

Standard

Çalışma Sıcaklığı

150°C (TJ)

Vgsth Max Id

2.5V @ 1mA

Fabrika Paket Adedi

2500

Qualification

AEC-Q101

Typical Turnoff Delay Time

25 ns

Vgs Th Gatesource Threshold Voltage

2.5 V

RoHS

Details

Tedarikçi Cihaz Paketi

8-SOP

Current Continuous Drain Id25

3.5A (Ta)

Drain To Source Voltage Vdss

60V

Channel Mode

Enhancement

Id Continuous Drain Current

3.5 A

Typical Turnon Delay Time

7 ns

Qg Gate Charge

5.2 nC

Ürün Durumu

Active

Ambalaj

Cut Tape

Rds On Drainsource Resistance

120 mOhms

Kılıf / Paket

8-SOIC (0.154", 3.90mm Width)

Montaj Tipi

Surface Mount

Vgs Gatesource Voltage

- 20 V, + 20 V

Rds On Max Id Vgs

120mOhm @ 3.5A, 10V

Power Max

2W (Ta)

Ürün Tipi

MOSFET

Configuration

Dual

Transistor Polarity

N Channel

Fet Type

2 N-Channel (Dual)

Transistor Type

2 N-Channel

Gate Charge Qg Max Vgs

5.2nC @ 5V

Technology

Si