SP8K31FRATB

Specifications

Vgsth Max Id

2.5V @ 1mA

Yayın Yılı

2017

Çalışma Sıcaklığı

150°C

Fet Feature

Standard

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Drain To Source Voltage Vdss

60V

Current Continuous Drain Id25

3.5A Ta

RoHS Durumu

ROHS3 Compliant

Ds Breakdown Voltagemin

60V

Transistor Element Material

SILICON

Continuous Drain Current Id

3.5A

Number Of Elements

2

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.15Ohm

Threshold Voltage

2.5V

Input Capacitance Ciss Max Vds

250pF @ 10V

Pulsed Drain Currentmax Idm

14A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Gate Charge Qg Max Vgs

5.2nC @ 5V

Seri

Automotive, AEC-Q101

Yüzey Montaj

YES

Pin Sayısı

8

Terminal Sayısı

8

Fabrika Tedarik Süresi

20 Weeks

Terminal Formu

GULL WING

Fet Type

2 N-Channel (Dual)

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Max Power Dissipation

2W

Ambalaj

Cut Tape (CT)

Reach Svhc

Unknown

Rds On Max Id Vgs

120m Ω @ 3.5A, 10V

REACH Uyumluluk Kodu

not_compliant

Parça Durumu

Active

Montaj Tipi

Surface Mount