SP8K24FRATB

Specifications

Continuous Drain Current Id

6A

Transistor Element Material

SILICON

Number Of Elements

2

Ds Breakdown Voltagemin

45V

Input Capacitance Ciss Max Vds

1400pF @ 10V

Pulsed Drain Currentmax Idm

24A

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Threshold Voltage

2.5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.037Ohm

Vgsth Max Id

2.5V @ 1mA

Drain Currentmax Abs Id

6A

Yayın Yılı

2017

Çalışma Sıcaklığı

150°C

Fet Feature

Standard

RoHS Durumu

ROHS3 Compliant

Current Continuous Drain Id25

6A Ta

Drain To Source Voltage Vdss

45V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

ECCN Kodu

EAR99

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Reach Svhc

Unknown

Max Power Dissipation

2W

Ambalaj

Cut Tape (CT)

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Montaj Tipi

Surface Mount

Parça Durumu

Active

REACH Uyumluluk Kodu

not_compliant

Rds On Max Id Vgs

25m Ω @ 6A, 10V

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Formu

GULL WING

Fet Type

2 N-Channel (Dual)

Terminal Sayısı

8

Fabrika Tedarik Süresi

20 Weeks

Seri

Automotive, AEC-Q101

Yüzey Montaj

YES

Pin Sayısı

8

Gate Charge Qg Max Vgs

21.6nC @ 5V