SP8K22FRATB

Specifications

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Seri

Automotive, AEC-Q101

Yüzey Montaj

YES

Gate Charge Qg Max Vgs

9.6nC @ 5V

Terminal Formu

GULL WING

Fet Type

2 N-Channel (Dual)

Terminal Sayısı

8

Fabrika Tedarik Süresi

20 Weeks

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Ambalaj

Cut Tape (CT)

Rds On Max Id Vgs

46m Ω @ 4.5A, 10V

Power Max

2W

Montaj Tipi

Surface Mount

Parça Durumu

Active

Vgsth Max Id

2.5V @ 1mA

Drain Currentmax Abs Id

4.5A

Yayın Yılı

2016

Çalışma Sıcaklığı

150°C TJ

Fet Feature

Standard

Drain To Source Voltage Vdss

45V

Transistor Application

SWITCHING

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

RoHS Durumu

ROHS3 Compliant

Jesd30 Code

R-PDSO-G8

Current Continuous Drain Id25

4.5A Ta

Transistor Element Material

SILICON

Number Of Elements

2

Ds Breakdown Voltagemin

45V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drainsource On Resistancemax

0.064Ohm

Input Capacitance Ciss Max Vds

550pF @ 10V

Pulsed Drain Currentmax Idm

18A

Fet Technology

METAL-OXIDE SEMICONDUCTOR