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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Turn On Delay Time
- 6 ns
- Vgsth Max Id
- 2.5V @ 1mA
- Drain Currentmax Abs Id
- 5A
- Yayın Yılı
- 2004
- Çalışma Sıcaklığı
- 150°C TJ
- Fet Feature
- Logic Level Gate
- Power Dissipation
- 2W
- Montaj
- Surface Mount
- Kurşunsuz Kodu
- yes
- RoHS Durumu
- ROHS3 Compliant
- Drain To Source Breakdown Voltage
- 30V
- ECCN Kodu
- EAR99
- Tepe Reflow Süresi (maks. sn)
- 10
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- Transistor Element Material
- SILICON
- Fall Time Typ
- 5 ns
- Continuous Drain Current Id
- 5A
- Number Of Elements
- 2
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Pulsed Drain Currentmax Idm
- 20A
- Input Capacitance Ciss Max Vds
- 230pF @ 10V
- Pin Sayısı
- 8
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Rise Time
- 8ns
- Voltage Rated Dc
- 30V
- Radyasyon Dayanımı
- No
- Tepe Reflow Sıcaklığı (°C)
- 260
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Terminal Formu
- GULL WING
- Fet Type
- 2 N-Channel (Dual)
- Terminal Sayısı
- 8
- Temel Parça No
- *K1
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 8
- Gate Charge Qg Max Vgs
- 5.5nC @ 5V
- Terminal Kaplaması
- TIN COPPER
- JESD-609 Kodu
- e2
- Max Power Dissipation
- 2W
- Ambalaj
- Tape & Reel (TR)
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