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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Drain To Source Voltage Vdss
- 30V
- Tepe Reflow Süresi (maks. sn)
- 10
- ECCN Kodu
- EAR99
- Operating Mode
- ENHANCEMENT MODE
- Transistor Application
- SWITCHING
- RoHS Durumu
- ROHS3 Compliant
- Qualification Status
- Not Qualified
- Drain Currentmax Abs Id
- 2A
- Yayın Yılı
- 2003
- Çalışma Sıcaklığı
- 150°C TJ
- Fet Feature
- Logic Level Gate
- Vgsth Max Id
- 2.5V @ 1mA
- Montaj
- Surface Mount
- Pin Sayısı
- 8
- Rise Time
- 10ns
- Drainsource On Resistancemax
- 0.235Ohm
- Voltage Rated Dc
- -30V
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Input Capacitance Ciss Max Vds
- 190pF @ 10V
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Pulsed Drain Currentmax Idm
- 8A
- Number Of Elements
- 2
- Transistor Element Material
- SILICON
- Continuous Drain Current Id
- 2A
- Pin Sayısı
- 8
- Gate Charge Qg Max Vgs
- 2.4nC @ 5V
- Terminal Kaplaması
- TIN COPPER
- Fet Type
- 2 P-Channel (Dual)
- Terminal Formu
- GULL WING
- Temel Parça No
- *J4
- Terminal Sayısı
- 8
- Tepe Reflow Sıcaklığı (°C)
- 260
- Configuration
- SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
- Rds On Max Id Vgs
- 235m Ω @ 2A, 10V
- Akım Değeri
- -2A
- Kurşunsuz
- Lead Free
- Montaj Tipi
- Surface Mount
- Parça Durumu
- Obsolete
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- JESD-609 Kodu
- e2
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