SP8J3FU6TB

Specifications

Gate To Source Voltage Vgs

20V

Pin Sayısı

8

Gate Charge Qg Max Vgs

5.5nC @ 5V

Fet Type

2 P-Channel (Dual)

Temel Parça No

*J3

Radyasyon Dayanımı

No

Rds On Max Id Vgs

90m Ω @ 3.5A, 10V

Polaritychannel Type

N-CHANNEL

Montaj Tipi

Surface Mount

Parça Durumu

Obsolete

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Turn Off Delay Time

35 ns

Reach Svhc

No SVHC

Ambalaj

Tape & Reel (TR)

Max Power Dissipation

2W

Drain To Source Breakdown Voltage

30V

Drain To Source Voltage Vdss

30V

Operating Mode

ENHANCEMENT MODE

ECCN Kodu

EAR99

RoHS Durumu

ROHS3 Compliant

Turn On Delay Time

10 ns

Vgsth Max Id

2.5V @ 1mA

Fet Feature

Logic Level Gate

Çalışma Sıcaklığı

150°C TJ

Yayın Yılı

2006

Power Dissipation

2W

Montaj

Surface Mount

Threshold Voltage

-2.5V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Rise Time

15ns

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Input Capacitance Ciss Max Vds

490pF @ 10V

Fall Time Typ

10 ns

Continuous Drain Current Id

3.5A