SH8KB7TB1

Specifications

Montaj Tipi

Surface Mount

Rds On Drainsource Resistance

8.4 mOhms

Typical Turnoff Delay Time

47 ns

Kılıf / Paket

8-SOIC (0.154", 3.90mm Width)

Fabrika Paket Adedi

2500

Number Of Elements Per Chip

2

Current Continuous Drain Id25

13.5A (Ta)

Fet Feature

Standard

Rds On Max Id Vgs

8.4mOhm @ 13.5A, 10V

Vgs Th Gatesource Threshold Voltage

2.5 V

Ürün Durumu

Active

RoHS

Details

Input Capacitance Ciss Max Vds

1570pF @ 20V

Vgsth Max Id

2.5V @ 1mA

Ürün Tipi

MOSFET

Transistor Polarity

N Channel

Montaj Stili

SMD/SMT

Qg Gate Charge

27 nC

Minimum Operating Temperature

- 55 C

Id Continuous Drain Current

13.5 A

Number Of Channels

2 Channel

Channel Mode

Enhancement

Fet Type

2 N-Channel (Dual)

Technology

Si

Power Max

2W (Ta)

Maks. Çalışma Sıcaklığı

+ 150 C

Vgs Gatesource Voltage

- 20 V, + 20 V

Drain To Source Voltage Vdss

40V

Pin Sayısı

8

Rise Time

16 ns

Package Type

SOP

Pd Power Dissipation

2 W

Continuous Drain Current Id

13.5A

Vds Drainsource Breakdown Voltage

40 V

Çalışma Sıcaklığı

150°C (TJ)

Tedarikçi Cihaz Paketi

8-SOP

Ambalaj

Cut Tape

Typical Turnon Delay Time

18 ns

Channel Type

N Channel

Configuration

Dual